Bipolar transistor with an insulated gate electrode
US6576936B1 · kind B1 · utility
4Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2000 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Oct 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT is specified which can be produced in a simple manner yet can be turned on homogeneously. For this purpose, gate fingers are dispensed with and the gate current in the IGBT-Chip is forwarded, proceeding from the gate terminal, directly via the polysilicon layers of the gate electrodes to the IGBT standard cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.