Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer
US6576980B1 · kind B1 · utility
9Cited by
10References
14Claims
0Family size
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Key dates
| Filing date | Nov 30, 1999 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Nov 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of surface treating a surface and semiconductor article is disclosed. A deposited surface layer on a substrate, such as a semiconductor surface, is treated and annealed within an alkyl environment of a chemical vapor deposition chamber to passivate the surface layer by bonding with the silicon and attaching alkyl terminating chemical species on the surface of the surface layer to aid in dehydroxylating the surface. The surface layer comprises a silicon-oxy-carbide surface layer having a carbon content ranging from about 5% to about 20% at the molecular level and a dielectric constant of about 2.5 to about 3.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.