Apparatus and method for measuring substrate biasing during plasma processing of a substrate
US6577113B2 · kind B2 · utility
7Cited by
18References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jun 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. Multiple voltage measurement circuits are electrically coupled to the RF power source and the electrodes to measure voltages at multiple points. A precursor determines the DC bias levels of the electrodes based on the multiple measurement points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.