One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6577161B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1778
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A one transistor, non-volatile programmable switch includes uni-directional and in some embodiments, bi-directional, states. The programmable switch is used in an integrated circuit, and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, and a data storage structure constitute the programmable switch. The non-volatile programmable transistor used in the switch is a charge programmable device (e.g. SONOS cell), in which the data storage structure comprises a nitride layer, or other charge trapping layer, between oxides or other insulators. The transistor stores four states, including a first unidirectional state in which the cell allows signal flow in a first direction, as second unidirectional state in which the cell allows signal flow in a second direction, opposite to the first direction, a third state in which the cell allows bi-directional signal flow, and a fourth state in which signal flow is blocked (the swit…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.