Transient gate tunneling current control
US6577178B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2002 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Jul 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0948
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit includes a resistance-capacitance (RC) structure connected to a first set of transistors and a second set of transistors that perform the same logical function as the first set of transistors. The first set of transistors have thinner gate oxides than the second set of transistors. The RC structure drains an electric field from the first set of transistors, such that the first set of transistors are on only during initial transistor switching. In other words, the RC structure turns off the first set of transistors after transistor switching is completed. Also, the first set of transistors and the second set of transistors share common inputs and outputs. The first set of transistors exhibit higher tunneling currents than the second set of transistors. The thinner gate oxides of the first set of transistors cause the first set of transistors to exhibit higher device currents than the second set of transistors. The RC structure includes a capacitor connected to a gate of the first set of transistors and a resistor connected to the capacitor and to ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.