Method and apparatus for activating semiconductor impurities
US6577386B2 · kind B2 · utility
8Cited by
10References
2Claims
0Family size
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Key dates
| Filing date | May 11, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | May 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.