Process window based optical proximity correction of lithographic images
US6578190B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | Jun 10, 2003 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the pattern, determining simulated achievable dimensional bounds of the pattern, comparing the target dimensional bounds of the pattern to the simulated achievable dimensional bounds of the pattern, and determining locations where the simulated achievable dimensional bounds of the pattern differ from the target dimensional bounds of the pattern. In its preferred embodiment, the feature is an integrated circuit to be lithographically produced on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.