Patent · US Expired

Method and apparatus for determining photoresist pattern linearity

US6579650B2 · kind B2 · utility

1Cited by

1References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Tobias Mono · Dresden, DE
Paul Schroeder · Austin, US

Key dates

Filing date	Feb 23, 2001
Grant date	Jun 17, 2003
Priority date	—
Expiry date	Jul 13, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG01N23/04
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Method and apparatus for determining photoresist pattern linearity. The method and apparatus comprises a substrate and a measuring pattern (26) printed on the substrate comprising a series of parallel lines (37) having a line width (36) and having a pre-determined pitch. By magnifying the semiconductor wafer on which the pattern feature (34) is printed and analyzing the magnified wafer from a top down view, the linearity of the pattern feature (34) can be determined from the amount of shift in the edges of the pattern feature (34). By utilizing the method and apparatus for other pattern features, the linearity of the entire pattern can be determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.