Semiconductor memory device having ferroelectric film and manufacturing method thereof
US6579754B2 · kind B2 · utility
7Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2001 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | May 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.