Method for forming aluminum oxide as a gate dielectric
US6579767B2 · kind B2 · utility
30Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2000 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Dec 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO2 layer is thermally grown on top of the semiconductor device by using a wet H2/O2 or a dry O2. And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.