Method for depositing a two-layer diffusion barrier

US6579786B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Sven Schmidbauer · Dresden, DE
• Alexander Ruf · Dresden, DE

Key dates

• Filing date: Nov 19, 2001
• Grant date: Jun 17, 2003
• Expiry date: Nov 19, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for depositing a two-layer diffusion barrier on a semiconductor wafer consisting of a TaN layer and a Ta layer serving as a carrier layer for copper interconnects. The TaN layer is inventively deposited at temperatures above 200° C. in a first step, and the Ta layer is deposited in a second step while cooling the semiconductor wafer to a temperature below 50° C.