Window for light-emitting diode

US6580096B2 · kind B2 · utility

Assignee

• AXT, INC. · US

Inventors

• John Chen · Walnut, US
• Bingwen Liang · Sunnyvale, US
• Robert Shih · Hsinchu, TW

Key dates

• Filing date: Jun 13, 2002
• Grant date: Jun 17, 2003
• Expiry date: Jun 13, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.