Elimination of contaminants prior to epitaxy and related structure
US6580104B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Apr 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to the disclosed method, the surface of a semiconductor wafer is covered by a protective oxide. The semiconductor wafer is then placed in a CVD reactor at a first temperature. Contaminants and the protective oxide are then removed from the surface of the semiconductor wafer at the first temperature. While contaminants and the protective oxide are being removed by the action of HCl and DCS, any silicon being removed from the surface of the silicon wafer, is being replenished so that there is no net change in the amount of silicon on the surface of the water. After removal of the contaminants and the protective oxide, epitaxial growth is performed on the surface of the semiconductor wafer at the first temperature. A structure comprising an epitaxially grown region can be fabricated according to the disclosed method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.