Damascene double-gate FET
US6580132B1 · kind B1 · utility
39Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | Jun 17, 2003 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A double-gate field effect transistor (DGFET) is provided using a damascene-like replacement gate processing step to create sidewall source/drain regions, oxide spacers and gate structures inside a previously formed trench. The damascene-like replacement gate processing step allows for the fabrication of a tapered transistor body region having a thicker body under the contacts which reduces access resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.