Method for fabricating a trench isolation for electrically active components

US6583020B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ines Uhlig · Dresden, DE
• Jens Zimmermann · Dresden, DE
• Stephan Wege · Osterburken, DE

Key dates

• Filing date: Sep 11, 2001
• Grant date: Jun 24, 2003
• Expiry date: Sep 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76232
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a trench isolation for electrically active components in a semiconductor component. A mask is applied to a semiconductor substrate. Subsequently, a trench having side walls is formed in the semiconductor substrate by performing a dry etching process using at least one etching gas such that during the dry etching process, polymers are produced that at least partly cover the side walls of the trench and thereby at least partially protect the side walls against an etching attack from the etching gas. The etching gas is provided with a compound that is selected from the group consisting of at least one hydrocarbon compound and a fluorinated hydrocarbon compound. The trench is filled with an insulating oxide.