Method for forming conductive line in semiconductor device
US6583054B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 1999 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Oct 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided with a method for forming conductive lines in a semiconductor device including the steps of: (a) forming a first conductive line on a substrate; (b) forming a first insulating layer on the substrate as well as on the first conductive line; (c) etching the first insulating layer on the first conductive line to form a first opening; (d) forming a second insulating layer on the first insulating layer to be in contact with the upper part of the first opening, thereby sealing the first opening; (e) etching the first and second insulating layers corresponding to the first conductive line to form a second opening and at the same time extend the first opening so as to expose the first conductive line; and (f) forming a second conductive line within the first and second openings so as to be connected with the first conductive line, thereby preventing halation caused by irregular reflection during exposure on the second photo resist because the second insulating layer has a less difference in thickness, and suppressing decrease in the exposed area of the first conductive line caused by extension of the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.