Projection ion beam machining apparatus
US6583426B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | May 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a projection ion beam machining apparatus having a liquid metal ion source, a combination of two or three electrostatic lenses arranged between the liquid metal ion source and a sample and a stencil mask exchangeably arranged in the combination of the electrostatic lenses, when a distance from substantial center of the electrostatic lens most proximate to the ion source and an ion emitting portion of the ion source is designated by Lo, a distance from the substantial center of the electiostatic lens most proximiate to the sample and the surface of the sample is designated by Li and a distance between the substantial centers of the two lenses is designated by L, by making a value of (L/Lo)(L/Li) equal to or larger than 400, current density on the sample of ion beam accelerated to several 10 kV for projecting a pattern of a stencil mask can be made equal to or larger than 20 mA per 1 square cm and resolution of edge can be made equal to or smaller than 0.2 &mgr;m when the size of the ion beam is 5 &mgr;m. As a result, a region having a size equal to or smaller than several 10 &mgr;m can be machined at speed several times or more as fast as that of FIB having equivalent machining a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.