Integrated electronic-optoelectronic devices and method of making the same

US6583445B1 · kind B1 · utility

Assignees

• Peregrine Semiconductor Corporation · US
• George Mason University · US
• The John Hopkins University · US
• The United States of America as represented by the Secretary of the Army · US

Inventors

• Ronald E. Reedy · San Diego, US
• Ravindra A. Athale · Burke, US
• George J. Simonis · Silver Spring, US
• Andreas G. Andreou · Baltimore, US
• Alyssa B. Apsel · Baltimore, US
• Zaven Kalayjian · Gaithersburg, US
• Philippe O. Pouliquen · Baltimore, US

Key dates

• Filing date: Sep 8, 2000
• Grant date: Jun 24, 2003
• Expiry date: Oct 7, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/183
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An integrated electronic-optoelectronic module comprising: an ultrathin silicon-on-sapphire composite substrate; at least one electronic device fabricated in the ultrathin silicon; and at least one optoelectronic device bonded to the ultrathin silicon-on-sapphire composite substrate and in electrical communication with the at least one electronic device fabricated in the ultrathin silicon layer. For example, VCSELs and photodetectors are integrated with CMOS electronic circuitry to provide useful modules for electro-optical interconnects for computing and switching systems.