Thyristor-based device having extended capacitive coupling
US6583452B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor device is manufactured having an extended portion that is outside a current path through the thyristor and that capacitively couples a conductive structure to a portion of the thyristor for controlling the current through the path. In one particular implementation, the extended portion extends from a base region of the thyristor and is outside of a current path through the base region and between an adjacent base region and an adjacent emitter region. A gate is formed capacitively coupled to the base region via the extended portion. In this manner, the control of the thyristor with the gate exhibits increased capacitive coupling, as compared to the control without the extended portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.