Scott Robins
63Patents
18h-index
11Co-inventors
77Inventor score
Filing activity: Mar 22, 2001 → Jun 10, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6653175B1 | Stability in thyristor-based memory device | Electricity | 166 | Expired |
| US7109532B1 | High Ion/Ioff SOI MOSFET using body voltage control | Electricity | 96 | Expired |
| US6462359B1 | Stability in thyristor-based memory device | Electricity | 92 | Expired |
| US6653174B1 | Thyristor-based device over substrate surface | Electricity | 81 | Expired |
| US6965129B1 | Thyristor-based device having dual control ports | Electricity | 52 | Expired |
| US10373956B2 | Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors | Electricity | 46 | Active |
| US6690039B1 | Thyristor-based device that inhibits undesirable conductive channel formation | Electricity | 43 | Expired |
| US6944051B1 | Data restore in thryistor based memory devices | Physics | 40 | Expired |
| US8093107B1 | Thyristor semiconductor memory and method of manufacture | Electricity | 37 | Active |
| US6703646B1 | Thyristor with lightly-doped emitter | Electricity | 33 | Expired |
| US6690038B1 | Thyristor-based device over substrate surface | Electricity | 28 | Expired |
| US6727528B1 | Thyristor-based device including trench dielectric isolation for thyristor-body regions | Electricity | 26 | Expired |
| US6891205B1 | Stability in thyristor-based memory device | Electricity | 25 | Expired |
| US7157342B1 | Thyristor-based semiconductor memory device and its method of manufacture | Electricity | 24 | Expired |
| US6818482B1 | Method for trench isolation for thyristor-based device | Electricity | 20 | Expired |
| US8519431B2 | Thyristors | Electricity | 20 | Active |
| US6583452B1 | Thyristor-based device having extended capacitive coupling | Electricity | 20 | Expired |
| US6756612B1 | Carrier coupler for thyristor-based semiconductor device | Electricity | 18 | Expired |
| US6686612B1 | Thyristor-based device adapted to inhibit parasitic current | Electricity | 18 | Expired |
| US6767770B1 | Method of forming self-aligned thin capacitively-coupled thyristor structure | Electricity | 17 | Expired |
| US7894255B1 | Thyristor based memory cell | Electricity | 16 | Active |
| US6940772B1 | Reference cells for TCCT based memory cells | Physics | 16 | Expired |
| US6815734B1 | Varied trench depth for thyristor isolation | Electricity | 16 | Expired |
| US6980457B1 | Thyristor-based device having a reduced-resistance contact to a buried emitter region | Electricity | 14 | Expired |
| US7320895B1 | Thyristor-based device having dual control ports | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.