Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers
US6583455B1 · kind B1 · utility
6Cited by
11References
42Claims
0Family size
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Key dates
| Filing date | Oct 19, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Oct 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.