Code addressable memory cell in a flash memory device
US6583465B1 · kind B1 · utility
2Cited by
12References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
There is disclosed a code addressable memory (“CAM”) cell in a flash memory device. In order to stabilize the operation of the CAM cell in a flash memory device operating at a low voltage, the present invention manufactures a CAM cell in which a floating gate is formed to extend on more than two active regions and more than two cell arrays are connected in parallel commonly using a source region and a drain region. Therefore, the present invention can increase the gate-coupling ration of the CAM cell, thus stabilizing the operation of the CAM cell at a device for low-voltage use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.