Semiconductor element
US6583468B2 · kind B2 · utility
8Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Jun 24, 2003 |
| Priority date | — |
| Expiry date | Dec 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.