Chemical mechanical planarization or polishing pad with sections having varied groove patterns
US6585579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jan 8, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24D11/04
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A CMP polishing pad improves overall material removal rate uniformity by combining multiple polishing pad sections in a serially linked manner, where the polishing pad sections are characterized by at least two different material removal rate profiles. The polishing pad is designed by determining a wafer polishing profile for each of a group of polishing pads where each polishing pad has a unique groove configuration, determining a combination of polishing pad segments, each of the segments constructed with one of the unique groove configurations, that will combine to achieve an improved uniformity in the polishing profile, and manufacturing a polishing pad having pad sections corresponding to the analytically determined pad sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.