Etchant
US6585910B1 · kind B1 · utility
21Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.