Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits
US6586347B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Oct 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved composite dielectric structure and method of forming thereof which prevents delamination of FSG (F-doped SiO2) and allows FSG to be used as the interlevel dielectric between successive conducting interconnection patterns in multilevel integrated circuit structures has been developed. The composite dielectric structure comprises FSG, undoped silicon oxide (optional), silicon-rich silicon oxide and silicon nitride. The silicon-rich silicon oxide layer having a thickness between about 1000 and 2000 Angstroms prevents reaction of F atoms from the FSG layer with the silicon nitride layer during subsequent manufacturing heat treatment cycles and prevents the deleterious formation of delamination bubbles which cause peeling of the FSG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.