Lattice-matched semiconductor materials for use in electronic or optoelectronic devices
US6586669B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Jun 7, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A perfectly or approximately lattice-matched semiconductor layer for use in an electronic or optoelectronic device. Perfectly lattice-matched (“PLM”) semiconductor layers prevent or lessen the formation and propagation of crystal defects in semiconductor devices, defects that can decrease the performance characteristics of the device. For some semiconductors, the ability to optimize composition-dependent properties over the wider range of compositions that approximately lattice-matched (“ALM”) semiconductor layers allows is more advantageous than the lower strain and dislocation density encountered for PLM layers. In addition, PLM cell layers and ALM cell layers are also expected to result in improved radiation resistance characteristics for some semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.