Semiconductor device for supplying output voltage according to high power supply voltage
US6586780B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1997 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Apr 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a p type semiconductor substrate, a first n type region formed at the semiconductor substrate, a first n channel DMOS transistor formed in the first n type region, a second n type region formed at the semiconductor substrate, a vertical type pnp bipolar transistor formed in the second n type region, and a second n channel DMOS transistor formed in the second n type region. The first n channel DMOS transistor has a drain for receiving a high power supply voltage (Vdc) and a source for supplying an output voltage (Vout). The bipolar transistor has a base connected to the gate of the first n channel DMOS transistor, an emitter connected to the source of the first n channel DMOS transistor, and a collector connected to the ground. The second n channel DMOS transistor has a drain connected to the gate of the first n channel DMOS transistor and a source connected to the ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.