Semiconductor device and its manufacture
US6586794B2 · kind B2 · utility
11Cited by
2References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Apr 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.