Isolation of alpha silicon diode sensors through ion implantation
US6586812B1 · kind B1 · utility
4Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1999 |
| Grant date | Jul 1, 2003 |
| Priority date | — |
| Expiry date | Apr 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
An array of image sensors that includes ion implantation regions that provide physical isolation between the pixel electrode regions. The physical isolation reduces coupling and cross-talk between the image sensors. The array of isolated image sensors can be formed by a simple fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.