Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
US6589099B2 · kind B2 · utility
8Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jul 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.