John Maltabes
16Patents
7h-index
11Co-inventors
55Inventor score
Filing activity: Aug 16, 1995 → Oct 15, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5637912A | Three-dimensional monolithic electronic module having stacked planar arrays of integrated circuit chips | Electricity | 41 | Expired |
| US6313567A | Lithography chuck having piezoelectric elements, and method | Physics | 39 | Expired |
| US6650135B1 | Measurement chuck having piezoelectric elements and method | Physics | 29 | Expired |
| US5786237A | Method for forming a monolithic electronic module by stacking planar arrays of integrated circuit chips | Electricity | 25 | Expired |
| US6491451B1 | Wafer processing equipment and method for processing wafers | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6589099B2 | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry | Electricity | 8 | Expired |
| US6686254B2 | Semiconductor structure and method for reducing charge damage | Electricity | 7 | Expired |
| US6902986B2 | Method for defining alignment marks in a semiconductor wafer | Physics | 6 | Expired |
| US6737205B2 | Arrangement and method for transferring a pattern from a mask to a wafer | Physics | 6 | Expired |
| US6895294B2 | Assembly comprising a plurality of mask containers, manufacturing system for manufacturing semiconductor devices, and method | Physics | 5 | Expired |
| US6495802B1 | Temperature-controlled chuck and method for controlling the temperature of a substantially flat object | Electricity | 3 | Expired |
| US6817602B2 | Manufacturing system method for processing a lithography mask container | Physics | 2 | Expired |
| US6620563B2 | Lithography method for forming semiconductor devices on a wafer utilizing atomic force microscopy | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6486049B2 | Method of fabricating semiconductor devices with contact studs formed without major polishing defects | Electricity | 2 | Expired |
| US6420247B1 | Method of forming structures on a semiconductor including doping profiles using thickness of photoresist | Electricity | 1 | Expired |
| US6744494B2 | Continuously adjustable neutral density area filter | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.