Compound semiconductor single crystal and fabrication process for compound semiconductor device
US6589447B1 · kind B1 · utility
94Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Dec 18, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Dec 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor single crystal or a group VI element component in the II-VI compound semiconductor single crystal is reduced less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal in a pattern-shaped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.