Patent · US Expired

GaN type semiconductor device

US6589808B2 · kind B2 · utility

35Cited by
8References
49Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 10, 2001
Grant dateJul 8, 2003
Priority date—
Expiry dateOct 10, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/841

Abstract

A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.