Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6589856B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Aug 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has a lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The layers of the semiconductor structure may be manufactured in such a way as to control the formation of anti-phase domains so that the structure may operate without the deleterious effe…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.