Manufacturing method of semiconductor film
US6589857B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2002 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Mar 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.