Method for forming electromigration-resistant structures by doping
US6589874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Jul 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistance is improved. In the method, the copper composition can be deposited by a variety of techniques such as electroplating, physical vapor deposition and chemical vapor deposition. The impurities which can be implanted include those of C, O, Cl, S and N at a suitable concentration range between about 0.01 ppm by weight and about 1000 ppm by weight. The impurities can be added by different methods such as ion implantation, annealing and diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.