Method for manufacturing aluminum oxide film for use in a semiconductor device
US6589886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.