Contact planarization using nanoporous silica materials
US6589889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then,(a) gelling or aging the applied coating,(b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure,(c) separating the planarized coating from the planarization object,(d) curing said planarized coating;wherein steps (a)-(d) are conducted in any one of the following sequences:(a), (b), (c) and (d);(a), (d), (b) and (c);(b), (a), (d) and (c); and(b), (c), (a) and (d).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.