Apparatus and method for forming photoresist pattern with target critical dimension
US6590219B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2000 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | Aug 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70191
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an apparatus and a method for forming a photoresist pattern with a target critical dimension on an exposure field on a semiconductor wafer. The apparatus includes a light source, a lens, and a filter. The light source is adapted to generate actinic radiation for illuminating a photomask pattern onto the exposure field on the semiconductor wafer. The lens is arranged to focus the actinic radiation from the light source. The filter has a substrate that is transparent to the actinic radiation with the substrate being partitioned into a plurality of regions. One or more regions in the substrate is implanted with a dopant species adapted to absorb the actinic radiation from the lens to increase the critical dimension of the one or more regions to the target critical dimension. In this configuration, the plurality of regions in the filter transmits the actinic radiation from the lens to the photomask for illuminating the exposure field on the semiconductor wafer to form a photoresist pattern on the exposure field with the target critical dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.