Apparatus and methods for imprint reduction for ferroelectric memory cell
US6590798B1 · kind B1 · utility
24Cited by
9References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 8, 2002 |
| Grant date | Jul 8, 2003 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices and methods are disclosed for reading a restoring data from and to ferroelectric memory cells, wherein a data bit is sensed from a data memory cell, a toggle bit is sensed from a toggle memory cell, and the sensed data bit is transferred to an IO line in either inverted form or non-inverted form according to the sensed toggle bit. The sensed data bit and the toggle bit are then inverted and restored to the data and toggle memory cells so as to mitigate or reduce cell imprint.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.