Katsuo Komatsuzaki
16Patents
9h-index
17Co-inventors
65Inventor score
Filing activity: Mar 10, 1987 → Jan 31, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6574135B1 | Shared sense amplifier for ferro-electric memory cell | Physics | 124 | Expired |
| US6512280B2 | Integrated CMOS structure for gate-controlled buried photodiode | Electricity | 72 | Expired |
| US6873536B2 | Shared data buffer in FeRAM utilizing word line direction segmentation | Physics | 55 | Expired |
| US6707702B1 | Volatile memory with non-volatile ferroelectric capacitors | Physics | 33 | Expired |
| US6944042B2 | Multiple bit memory cells and methods for reading non-volatile data | Physics | 29 | Expired |
| US5841688A | Matched delay word line strap | Electricity | 24 | Expired |
| US6590798B1 | Apparatus and methods for imprint reduction for ferroelectric memory cell | Physics | 24 | Expired |
| US6392263B1 | Integrated structure for reduced leakage and improved fill-factor in CMOS pixel | Electricity | 20 | Expired |
| US5761149A | Dynamic RAM | Electricity | 16 | Expired |
| US4708768A | Semiconductor device fabrication process | Electricity | 5 | Expired |
| US6753202B2 | CMOS photodiode having reduced dark current and improved light sensitivity and responsivity | Electricity | 5 | Expired |
| US5498897A | Transistor layout for semiconductor integrated circuit | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6867997B2 | Series feram cell array | Physics | 3 | Expired |
| US6760247B2 | Methods and apparatus for flexible memory access | Physics | 3 | Expired |
| US6621064B2 | CMOS photodiode having reduced dark current and improved light sensitivity and responsivity | Electricity | 3 | Expired |
| US7092276B2 | Series feram cell array | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.