Method of forming a semiconductor device by simultaneously cleaning both sides of a wafer using different cleaning solutions
US6592677B1 · kind B1 · utility
14Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Dec 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of removing a Cu-contamination from a wafer surface having a Cu-based metal region, comprising the step of: carrying out a cleaning process by use of a cleaning solution free of HF and capable of oxidation to the wafer surface for not only removing the Cu-contamination from the wafer surface but also oxidizing the wafer surface to cause the wafer surface to have a hydrophilicity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.