Method of treating an isulating layer
US6592770B1 · kind B1 · utility
2Cited by
8References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 11, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.