Polishing composition for metal CMP

US6592776B1 · kind B1 · utility

Assignee

• Cabot Microelectronics Corporation · US

Inventors

• Shumin Wang · Naperville, US
• Steven Grumbine · Aurora, US
• Christopher C. Streinz · Hersey, US
• Eric W. G. Hoglund · Algonquin, US

Key dates

• Filing date: Jul 5, 2000
• Grant date: Jul 15, 2003
• Expiry date: Jul 5, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.