Mesoporous films having reduced dielectric constants
US6592980B1 · kind B1 · utility
25Cited by
16References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2000 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process provides a ceramic film, such as a mesoporous silica film, on a substrate, such as a silicon wafer. The process includes preparing a film-forming fluid containing a ceramic precursor, a catalyst, a surfactant and a solvent, depositing the film-forming fluid on the substrate, and removing the solvent from the film-forming fluid on the substrate to produce the ceramic film on the substrate. The ceramic film has a dielectric constant below 2.3, a halide content of less than 1 ppm and a metal content of less than 500 ppm, making it useful for current and future microelectronics applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.