Attenuated rim phase shift mask
US6593033B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1999 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Sep 21, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/29
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.