Patent · US Expired

Structure for a reflection lithography mask and method for making same

US6593036B1 · kind B1 · utility

5Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2001
Grant dateJul 15, 2003
Priority date
Expiry dateMar 13, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG21K2201/067
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The invention concerns a structure for a lithographic reflection mask comprising a receive medium (12) on which is fixed a reflector (11) including at least one layer, the reflector (11) being fixed to the receive medium (12) in a reverse manner relative to a manufacturing medium (10) on which it has previously been manufactured and which is then

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.