METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT
US6593176B2 · kind B2 · utility
400Cited by
29References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single film is deposited but two isolated lower electrodes are formed therefrom. Additionally a diode stack is formed that communicates to the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.