Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material
US6593204B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76278
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.